We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for Correlated Electron Systems, within the Institute for Basic Science (IBS, South Korea), in collaboration with the University of Science and Technology of China, have reported the discovery of small and ferroelectrically tunable skyrmions. Published in Nature Materials, this wo...
We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for Correlated Electron Systems, within the Institute for Basic Science (IBS, South Korea), in collaboration with the University of Science and Technology of China, have reported the discovery of small and ferroelectrically tunable skyrmions. Published in Nature Materials, this wo...
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